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  4. RF Transistor
  5. INFINEON RF Transistor
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BGSX22G6U10E6327XTSA1

INFINEON

BGSX22G6U10E6327XTSA1

Description: 4xRF-CMOS-Switch 39dBm ULGA-10 Hersteller: INFINEON Matchcode: BGSX 22G6U10 E6327 Rutronik No.: THF5375 VPE: 4500 MOQ: 4500 Package: ULGA-10 Verpackung: REEL
Datenblatt
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Polarität
CMOS
U(cc) max
3.9 V
Frequenz f
7.125 MHz
Gehäuse
ULGA-10
Automotive
NO
RoHS Status
RoHS-conform
Verpackung
REEL
Hersteller Artikel
SP005419565
ECCN
EAR99
Zolltarifnummer
85423990000
Land
China
ABC-Schlüssel
A
Lieferzeit beim Hersteller
12 Wochen

DPDT GPIO 0.4 – 7.125 GHz antenna cross switch

The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT offers very low insertion loss even at high frequencies of up to 7.125GHz, low harmonic generation along with high isolation between RF ports. In addition, the fast switching speed enables 5G-SRS applications.

The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V-3.6V.

BGSX22G6U10 features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The device has a very small size of only 1.1mm x 1.1mm and thickness of 0.60mm.


Summary of Features

  • High linearity up to 39dBm peak power
  • Low current consumption, min supply voltage 1.6V
  • Ultra low insertion loss and high port to port isolation up to 7.125GHz
  • Fast switching speed for 5G-SRS applications
  • GPIO control interface
  • No decoupling capacitors required for typical applications
  • RoHS and WEEE compliant package
  • Ultra low profile lead-less plastic package (MSL-1, 260°C per IPC/JEDEC J-STD-20)
  • Size: 1.1mm x 1.5mm

Potential Applications

  • RF path routing/swapping for cellular mobile devices
  • GSM, WCDMA, 4G/LTE and 5G applications

Anfragen oder bestellen:

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1.647,00 $

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9.000 0,3288 $
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