SCT30N120
Hersteller: STMicroelectronics
Matchcode: SCT30N120
Rutronik No.: TMOSP11114
VPE: 30
MOQ: 600
Package: HiP247
Verpackung: TUBE
SiC-N 1200V 45A 80mOhm HiP247-3 Beschreibung
Silicon carbide Power MOSFET 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package
Parameter
- Configuration
- N-CH
- V(DS)
- 1200 V
- I(D)at Tc=25°C
- 45 A
- RDS(on)at 10V
- 80 mOhm
- Q(g)
- 105 nC
- P(tot)
- 270 W
- R(thJC)
- 0.65 K/W
- Logic level
- NO
- Mounting
- THT
- Technology
- SiC
- Fast bodydiode
- YES
- Automotive
- NO
- Gehäuse
- HiP247
- Bleifrei Definition
- 10
- Verpackung
- TUBE
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- Japan
- ABC-Schlüssel
- C
- Lieferzeit beim Hersteller
- 99 Wochen
