IGW25N120H3
Abbildung kann vom Original abweichen
Hersteller: INFINEON
Matchcode: IGW25N120H3
Rutronik No.: IGBT1162
VPE: 30
MOQ: 30
Package: TO247-3
Verpackung: TUBE
IGBT 1200V 50A 2.05V TO247-3 Beschreibung
Description:
High speed 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features:
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70 kHz
- Low switching losses for high efficiency
- Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Offering Tj(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits:
- Low switching and conduction losses
- Very good EMI behavior
- Can be used with a small gate resistor for reduced delay time and voltage overshoot
- High current density
- Best-in-class 1200 V IGBT efficiency and EMI behavior
Target Applications:
- Industrial heating and welding
- solar
- power supply
Parameter
- V(CE)
- 1200 V
- I(C)
- 50 A
- V(CEsat)
- 2.40 V
- Gehäuse
- TO247-3
- Bodydiode
- NO
- P(tot)
- 326 W
- Automotive
- NO
- t(r)
- 41 nS
- td(off)
- 277 nS
- td(on)
- 27 nS
- Befestigung
- THT
- RoHS Status
- RoHS-conform
- Technologie
- HighSpeed
- Verpackung
- TUBE
- Hersteller Artikel
- SP000674424
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- China
- ABC-Schlüssel
- A
- Lieferzeit beim Hersteller
- 24 Wochen
