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A4G04QC6BNTDSO

ATP A4G04QC6BNTDSO

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ATP

SO-DIMM DDR4 4GB SAMSUNG IC
Hersteller: ATP
Matchcode: A4G04QC6BNTDSO
Rutronik No.: DISMOD1976
VPE: 1
MOQ: 1
Verpackung: TRAY
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Datenblatt
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SO-DIMM DDR4 4GB SAMSUNG IC Beschreibung

Rutronik Approved Compatibility (MemTest86)

Boards:

+ DISBOA3164 (Validated by Rutronik)

+ DISBOA3246 (Validated by Rutronik)


Please contact PM Richard Klauser for MemTest86 Pro Certificate.


ATP's fourth-generation industrial DDR memory combines up to 3200 MT/s data transfer rate and a mere 1.2V power consumption to deliver faster performance at higher power savings over earlier DRAM technologies.

As the evolutionary transition from DDR3, DDR4 supports features and functions that are well-suited for increasing bandwidth capabilities to support the growth of online traffic.

DDR4-3200 MT/s is the newest generation of fast, performance-oriented DRAM modules optimized for the latest Intel® Xeon® Platinum, Gold, Silver and Bronze Scalable processors and 8th-generation Intel® Core™ i7/i5/i3 processors. The increased interface speed from 2400 MT/s to 3200 MT/s amplifies theoretical peak performance by 20% and gives a boost to the most critical computing applications in industries such as telecommunication infrastructures, networking storage systems, network-attached storage (NAS) servers, micro/cloud servers, and embedded systems like industrial PCs.

Features:

  • Density: 2 GB to 128 GB
  • Increased performance and bandwidth (up to 3200 MT/s)
  • Decreased voltage for better power consumption
  • Provides better reliability, availability and serviceability (RAS) and improves data integrity

Parameter

Speicherkapazität
4 GB
Temp. Max
95°C
Anordnung
SO-DIMM
Temp. Min
0°C
Takt(geber)frequenz
2666 MHZ
ECC
NO
Spannung
1.2
Pins
260
registriert
NO
Automotive
NO
RoHS Status
RoHS-conform
Verpackung
TRAY
ECCN
EAR99
Zolltarifnummer
84733020000
Land
Taiwan
ABC-Schlüssel
A
Lieferzeit beim Hersteller
6 Wochen
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