IPB117N20NFDATMA1
IPB117N20NFDATMA1
Description:
N-CH 200V 84A 11,7mOhm TO263
Hersteller:
INFINEON
Matchcode:
IPB117N20NFD
Rutronik No.:
TMOSP11539
VPE:
1000
MOQ:
1000
Package:
D2PAK
Verpackung:
REEL
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- Configuration
- N-CH
- V(DS)
- 200 V
- I(D)at Tc=25°C
- 84 A
- RDS(on)at 10V
- 11.7 mOhm
- Q(g)
- 65 nC
- P(tot)
- 300 W
- R(thJC)
- 0.5 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- OptiMOS FD
- Fast bodydiode
- NO
- Automotive
- NO
- Gehäuse
- D2PAK
- RoHS Status
- RoHS-conform
- Verpackung
- REEL
- Hersteller Artikel
- SP001107232
- ECCN
- EAR99
- Zolltarifnummer
- 85412900000
- Land
- Malaysia
- ABC-Schlüssel
- A
- Lieferzeit beim Hersteller
- 18 Wochen
New OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
Summary of Features
- Improved hard commutation ruggedness
- Optimized hard switching behavior
- Industry’s lowest R ds(on), Q g and Q rr
- RoHS compliant - halogen free
Benefits
- Highest system reliability
- System cost reduction
- Highest efficiency and power density
- Easy-to-design products
Target Applications
- Telecom
- Class D audio amplifier
- Motor control for 48-110V systems
- Industrial power supplies
- DC-AC inverter
